منابع مشابه
SAR ADC in 65 nm CMOS
This paper presents a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) design for sensor applications. An energy-saving switching technique is proposed to achieve ultra low power consumption. The measured Signal-to-Noise-and-Distortion Ratio (SNDR) of the ADC is 58.4 dB at 2 MS/s with an ultra-low power consumption of only 6.6 μW from a 0.8V supply, resulting in a Figure-...
متن کاملMicroarchitecture and implementation of the synergistic processor in 65-nm and 90-nm SOI
implementation of the synergistic processor in 65-nm and 90-nm SOI B. Flachs S. Asano S. H. Dhong H. P. Hofstee G. Gervais R. Kim T. Le P. Liu J. Leenstra J. S. Liberty B. Michael H.-J. Oh S. M. Mueller O. Takahashi K. Hirairi A. Kawasumi H. Murakami H. Noro S. Onishi J. Pille J. Silberman S. Yong A. Hatakeyama Y. Watanabe N. Yano D. A. Brokenshire M. Peyravian V. To E. Iwata This paper describ...
متن کاملCD-SEM Technologies for 65-nm Process Node
OVERVIEW: Improved measurement repeatability of new CD-SEM systems for the 65-nm node has increased demand for ways to deal with pattern roughness and other new issues that have emerged as device feature sizes have continued to shrink. Hitachi Group’s newest generation CD-SEM developed for the 65-nm node and beyond, is now available. A range of elemental technologies are now under investigation...
متن کاملIntegration of NEMS resonators in a 65 nm CMOS technology
In this work we study the feasibility to obtain the smallest CMOS-NEMS resonator using a sub-100 nm CMOS technology. The NEMS resonators are defined in a top-down approach using the available layers of the 65 nm CMOS technology from ST Microelectronics. A combination of dry and wet etching is developed in order to release the NEMS in an in-house post-CMOS process. Two different NEMS resonators ...
متن کاملModeling Frequency Response of 65 nm CMOS RF Power Devices
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (fT) and maximum oscillation frequency (fmax) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in fT and fmax is the presence of non-scalable parasitic resistances...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Micro
سال: 2007
ISSN: 0272-1732
DOI: 10.1109/mm.2007.4378785